Toshiba has developed a new FeRAM Ferroelectric Random Access Memory, which is the fastest and highest density non-volatile RAM. Toshiba’s new FeRAM features storage of 128-megabits and read and write speeds of 1.6-gigabytes a second.
Toshiba said that it would continue R&D in FeRAM, aiming for further capacity increases and eventual use in a wide range of applications, including the main memory of mobile phones, mobile consumer products, and cache memory applications in products such as mobile PCs and SSDs.
Main specifications:
- Process 130 nanometer CMOS
- Density 128 megabits
- Cell size 0.252 μm2
- Read/ write speed (bandwidth) 1.6 gigabytes/second (DDR2 interface)
- Cycle time 83 nanoseconds
- Access time 43 nanoseconds
- Power supply 1.8V
