Toshiba announced the 32nm double data rate Toggle Mode NAND flash memory. The new 32nm NAND is available in MLC version with 64Gb, 128Gb and 256Gb densities and single-level cell (SLC) versions with densities of 32Gb, 64Gb and 128Gb.
According to Toshiba, the new double data rate Toggle Mode 1.0 NAND has a fast interface rated at 133 megatransfers/second (MT/s), compared to 40MT/s for legacy SLC single data rate NAND. The DDR interface in Toggle Mode NAND uses a Bidirectional DQS to generate input/output signals (I/Os) using the rising and falling edge of the write erase signal. Toggle Mode NAND also has on-die termination to help achieve less crosstalk.
Models:
| Toshiba 32nm Toggle Mode Specifications | ||||||
| Type | Density | Configuration | Page/Block Size | Package | Vcc | VccQ |
| SLC | 32Gb (4GB)4 | 2st/2CE | 8kB/1MB | 132 BGA | 2.7 – 3.6 | 1.8 |
| 3.3 | ||||||
| 64Gb (8GB) | 4st/4CE | 8kB/1MB | 132 BGA | 2.7 – 3.6 | 1.8 | |
| 3.3 | ||||||
| 128Gb (16GB) | 8st/4CE | 8kB/1MB | 132 BGA | 2.7 – 3.6 | 1.8 | |
| 3.3 | ||||||
| MLC | 64Gb (8GB) | 2st/2CE | 8kB/1MB | 132 BGA | 2.7 – 3.6 | 1.8 |
| 3.3 | ||||||
| 128Gb (16GB) | 4st/4CE | 8kB/1MB | 132 BGA | 2.7 – 3.6 | 1.8 | |
| 3.3 | ||||||
| 256Gb (32GB) | 8st/4CE | 8kB/1MB | 132 BGA | 2.7 – 3.6 | 1.8 | |
| 3.3 | ||||||
